switching diode 1ss400 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high speed switching ? features 1)ultra small mold type. (umd2) 2)high reliability ? construction silicon epitaxial planar ? structure ? absolute maximum ratings (ta=25 ?c) symbol unit v rm v v r v i fm ma io ma i surge ma tj ?c tstg ?c ? electrical characteristics (ta=25 ?c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma reverse current i r - - 0.1 a v r =80v ct - - 3 pf v r =0.5v , f=1mhz trr - - 4 ns v r =6v , if=10ma , rl=100? reverse recovery time ? taping dimensions (unit : mm) parameter capacitance between terminals junction temperature 125 storage temperature ? 55 to ? 125 average rectified forward current 100 surge current(t=1s) 500 reverse voltage (dc) 80 forward voltage(repetitive peak) 225 parameter limits reverse voltage (repetitive) 90 emd2 0.8 1.7 0.6 0.950.06 0 4.00.1 4.00.1 2.00.05 1.50.05 3.50.05 1.750.1 8.00.15 0.20.05 0.760.05 1.260.05 0 0.5 0.6 2.00.05 1.30.06 0 2.450.1 ??? 0.2 empty pocket rohm : emd2 jeita : sc-79 jedec :sod-523 dot (year week factory) 0.120.05 0.60.1 0.30.05 0.80.05 1.20.05 1.60.1 1/2 2011.06 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
1ss400 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma i f =10ma 300us time mounted on epoxy board 0.1 1 10 100 0.1 1 10 100 t ifsm 0.1 1 10 100 1 10 100 8.3m ifsm 1cyc 8.3m 0 1 2 3 4 5 0 5 10 15 20 8.3ms ifsm 1cyc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 20 40 60 80 100 900 910 920 930 940 950 0.1 1 10 0 5 10 15 0.1 1 10 100 1000 10000 100000 0 20 40 60 80 100 120 ta=125 ta= ? 25 ta=25 ta=75 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 ta= ? 25 ta=125 ta=75 ta=25 forward voltage : v f (v) v f -i f characteristics forward current : i f (ma) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) trr dispersion map reverse recovery time:trr(ns) electrostatic discharge test esd(kv) esd dispersion map f=1mhz ave:930.3mv ta=25 i f =100ma n=30pcs ta=25 v r =80v n=30pcs ave:12.47na ave:0.698pf ta=25 v r =0.5v f=1mhz n=10pcs ave:4.05a ave:1.20ns ta=25 v r =6v i f =10ma rl=100 ? irr=0.1*i r n=10pcs ave:6.43kv c=100pf r=1.5k ? c=200pf r=0 ? ave:1.58kv 2/2 2011.06 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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